Publication:

H2O- and O3-based atomic layer deposition of high-K dielectric films on GeO2 passivation layers

Date

2009
Journal article
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dc.contributor.authorDelabie, Annelies
dc.contributor.authorAlian, AliReza
dc.contributor.authorBellenger, Florence
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T21:54:26Z
dc.date.available2021-10-17T21:54:26Z
dc.date.issued2009
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15215
dc.source.beginpageG163
dc.source.endpageG167
dc.source.issue10
dc.source.journalJournal of the Electrochemical Society
dc.source.volume156
dc.title

H2O- and O3-based atomic layer deposition of high-K dielectric films on GeO2 passivation layers

dc.typeJournal article
dspace.entity.typePublication
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