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High performance n-mos FinFET by damage-free, conformal extension doping
Publication:
High performance n-mos FinFET by damage-free, conformal extension doping
Date
2011
Proceedings Paper
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22905.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zschaetzsch, Gerd
;
Sasaki, Y.
;
Hayashi, S.
;
Togo, Mitsuhiro
;
Chiarella, Thomas
;
Kambham, Ajay Kumar
;
Mody, J.
;
Douhard, Bastien
;
Horiguchi, Naoto
;
Mizuno, B.
;
Ogura, M.
;
Vandervorst, Wilfried
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1901
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
1901
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations