Publication:

High performance n-mos FinFET by damage-free, conformal extension doping

Date

2011
Proceedings Paper
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dc.contributor.authorZschaetzsch, Gerd
dc.contributor.authorSasaki, Y.
dc.contributor.authorHayashi, S.
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKambham, Ajay Kumar
dc.contributor.authorMody, J.
dc.contributor.authorDouhard, Bastien
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMizuno, B.
dc.contributor.authorOgura, M.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-19T22:34:32Z
dc.date.available2021-10-19T22:34:32Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20236
dc.source.beginpage841
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington, DC USA
dc.source.endpage844
dc.title

High performance n-mos FinFET by damage-free, conformal extension doping

dc.typeProceedings paper
dspace.entity.typePublication
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