Theory and experiments of the impact of work function variability on threshold voltage variability in MOS devices

dc.contributor.author	Zhang, Xiao
dc.contributor.author	Mitard, Jerome
dc.contributor.author	Ragnarsson, Lars-Ake
dc.contributor.author	Hoffmann, Thomas Y.
dc.contributor.author	Deal, Michael
dc.contributor.author	Grubbs, M.E.
dc.contributor.author	Li, Jing
dc.contributor.author	Magyari-Kope, B.
dc.contributor.author	Clemens, Bruce
dc.contributor.author	Nishi, Yoshio
dc.contributor.imecauthor	Mitard, Jerome
dc.contributor.imecauthor	Ragnarsson, Lars-Ake
dc.contributor.orcidimec	Mitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimec	Ragnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned	2021-10-20T19:39:20Z
dc.date.available	2021-10-20T19:39:20Z
dc.date.issued	2012
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/21926
dc.source.beginpage	3124
dc.source.endpage	3126
dc.source.issue	11
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	59
dc.title	Theory and experiments of the impact of work function variability on threshold voltage variability in MOS devices
dc.type	Journal article
dspace.entity.type	Publication
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