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Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2

Date

2005
Proceedings Paper
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dc.contributor.authorDeweerd, Wim
dc.contributor.authorSchram, Tom
dc.contributor.authorVan Hoornick, Nausikaa
dc.contributor.authorWitters, Thomas
dc.contributor.authorLisoni, Judit
dc.contributor.authorRohr, Erika
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorSchaekers, Marc
dc.contributor.authorRichard, Olivier
dc.contributor.authorWickramanayaka, Sunil
dc.contributor.authorYamada, N.
dc.contributor.authorBrunco, David
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVan Hoornick, Nausikaa
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorRichard, Olivier
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-16T01:21:54Z
dc.date.available2021-10-16T01:21:54Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10385
dc.source.beginpage62
dc.source.conference4th International Conference on Semiconductor Technology - ISTC
dc.source.conferencedate14/03/2005
dc.source.conferencelocationShangai China
dc.source.endpage71
dc.title

Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2

dc.typeProceedings paper
dspace.entity.typePublication
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