Publication:

Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

Date

2013
Journal article
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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRoussel, Philippe
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.date.accessioned2021-10-21T12:47:34Z
dc.date.available2021-10-21T12:47:34Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23175
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713002499
dc.source.beginpage314
dc.source.endpage317
dc.source.journalMicroelectronic Engineering
dc.source.volume109
dc.title

Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

dc.typeJournal article
dspace.entity.typePublication
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