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Recombination of O and H atoms with low-k SiOCH films pretreated in He plasma

Date

2009
Proceedings Paper
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dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorBraginsky, O.V.
dc.contributor.authorKovalev, A.S.
dc.contributor.authorLopaev, D.V.
dc.contributor.authorMankelevich, Y.A.
dc.contributor.authorRakhimova, T.V.
dc.contributor.authorMalykhin, E.M.
dc.contributor.authorProshina, O.V.
dc.contributor.authorRakhimov, A.T.
dc.contributor.authorVasilieva, A.N.
dc.contributor.authorVoloshin, D.G.
dc.contributor.authorZyryanov, S.M.
dc.date.accessioned2021-10-17T21:19:18Z
dc.date.available2021-10-17T21:19:18Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14934
dc.source.beginpage1156-D01-06
dc.source.conferenceMaterials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics
dc.source.conferencedate14/04/2009
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Recombination of O and H atoms with low-k SiOCH films pretreated in He plasma

dc.typeProceedings paper
dspace.entity.typePublication
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