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Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy
Publication:
Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy
Date
2004-01
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Eyben, Pierre
;
Alvarez, David
;
Jurczak, Gosia
;
Rooyackers, Rita
;
De Keersgieter, An
;
Augendre, Emmanuel
;
Vandervorst, Wilfried
Journal
Journal of Vacuum Science & Technology B
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1871
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1871
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations