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Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy

Date

2004-01
Journal article
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dc.contributor.authorEyben, Pierre
dc.contributor.authorAlvarez, David
dc.contributor.authorJurczak, Gosia
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.accessioned2021-10-15T13:23:07Z
dc.date.available2021-10-15T13:23:07Z
dc.date.issued2004-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8895
dc.source.beginpage364
dc.source.endpage368
dc.source.issue1
dc.source.journalJournal of Vacuum Science & Technology B
dc.source.volume22
dc.title

Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy

dc.typeJournal article
dspace.entity.typePublication
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