Publication:

Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures

Date

2004-01
Proceedings Paper
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dc.contributor.authorMehta, Anshu
dc.contributor.authorGromova, Maria
dc.contributor.authorRusu, C.
dc.contributor.authorBaert, Kris
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorRichard, Olivier
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorRichard, Olivier
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-15T14:47:56Z
dc.date.available2021-10-15T14:47:56Z
dc.date.issued2004-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9282
dc.source.beginpage721
dc.source.conference17th IEEE International Conference in Micro Electro Mechanical Systems - MEMS
dc.source.conferencedate25/01/2004
dc.source.conferencelocationMaastricht The Netherlands
dc.source.endpage724
dc.title

Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures

dc.typeProceedings paper
dspace.entity.typePublication
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