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Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation
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Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation
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Date
2010
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rosseel, Erik
;
Ortolland, Claude
;
Hikavyy, Andriy
;
Schram, Tom
;
Falepin, Annelies
;
Hoffmann, Thomas Y.
;
Douhard, Bastien
;
Moussa, Alain
;
Vandervorst, Wilfried
;
Ameen, Mike
;
Rubin, Leonard
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since deposited on 2021-10-18
Acq. date: 2025-12-10
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Downloads
1
since deposited on 2021-10-18
Acq. date: 2025-12-10
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1929
since deposited on 2021-10-18
Acq. date: 2025-12-10
Citations