Publication:

Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation

Date

2010
Proceedings Paper
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dc.contributor.authorRosseel, Erik
dc.contributor.authorOrtolland, Claude
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSchram, Tom
dc.contributor.authorFalepin, Annelies
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMoussa, Alain
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAmeen, Mike
dc.contributor.authorRubin, Leonard
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorFalepin, Annelies
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.date.accessioned2021-10-18T21:01:06Z
dc.date.available2021-10-18T21:01:06Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17909
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5623702
dc.source.beginpage32
dc.source.conference18th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate29/09/2010
dc.source.conferencelocationGainesville, FL USA
dc.source.endpage40
dc.title

Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation

dc.typeProceedings paper
dspace.entity.typePublication
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