Publication:
X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface
Date
| dc.contributor.author | Vitchev, R.G. | |
| dc.contributor.author | Pireaux, J.J. | |
| dc.contributor.author | Conard, Thierry | |
| dc.contributor.author | Bender, Hugo | |
| dc.contributor.author | Wolstenholme, J. | |
| dc.contributor.author | Defranoux, C. | |
| dc.contributor.imecauthor | Conard, Thierry | |
| dc.contributor.imecauthor | Bender, Hugo | |
| dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
| dc.date.accessioned | 2021-10-15T17:43:16Z | |
| dc.date.available | 2021-10-15T17:43:16Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9882 | |
| dc.source.beginpage | 21 | |
| dc.source.endpage | 25 | |
| dc.source.issue | 1_2 | |
| dc.source.journal | Applied Surface Science | |
| dc.source.volume | 235 | |
| dc.title | X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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