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SiGe vs. Si selective wet etchingfor Si gate-all-around

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dc.contributor.authorKomori, Kana
dc.contributor.authorRip, Jens
dc.contributor.authorYoshida, Yukifumi
dc.contributor.authorWostyn, Kurt
dc.contributor.authorSebaai, Farid
dc.contributor.authorLiu, Wen Dar
dc.contributor.authorLee, Yi Chia
dc.contributor.authorSekiguchi, Ryo
dc.contributor.authorMertens, Hans
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-25T21:09:57Z
dc.date.available2021-10-25T21:09:57Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31072
dc.identifier.urlhttps://doi.org/10.4028/www.scientific.net/SSP.282.107
dc.source.beginpage107
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate2/09/2018
dc.source.conferencelocationLeuven Belgium
dc.source.endpage112
dc.title

SiGe vs. Si selective wet etchingfor Si gate-all-around

dc.typeProceedings paper
dspace.entity.typePublication
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