Publication:

Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

Date

2016-03
Journal article
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMannaert, Geert
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-23T11:16:16Z
dc.date.available2021-10-23T11:16:16Z
dc.date.issued2016-03
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26725
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0040609015009682
dc.source.beginpage72
dc.source.endpage77
dc.source.journalThin Solid Films
dc.source.volume602
dc.title

Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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