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Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures
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Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures
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Date
2010
Proceedings Paper
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21030.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cui, Hushan
;
Van Hoof, Rita
;
Severi, Simone
;
Witvrouw, Ann
;
Knoops, An
;
Delande, Tinne
;
Pancken, Joris
;
Claes, Martine
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1949
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations
Metrics
Views
1949
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations