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Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

Date

2010
Proceedings Paper
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dc.contributor.authorCui, Hushan
dc.contributor.authorVan Hoof, Rita
dc.contributor.authorSeveri, Simone
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorKnoops, An
dc.contributor.authorDelande, Tinne
dc.contributor.authorPancken, Joris
dc.contributor.authorClaes, Martine
dc.contributor.imecauthorVan Hoof, Rita
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDelande, Tinne
dc.contributor.imecauthorPancken, Joris
dc.contributor.imecauthorClaes, Martine
dc.date.accessioned2021-10-18T15:44:34Z
dc.date.available2021-10-18T15:44:34Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16924
dc.source.beginpage295
dc.source.conferenceChemical Sensors 9 - and MEMS/NEMS 9
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
dc.source.endpage307
dc.title

Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

dc.typeProceedings paper
dspace.entity.typePublication
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