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Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation

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dc.contributor.authorReiche, M.
dc.contributor.authorMoutanabbir, O.
dc.contributor.authorHimcinschi, C.
dc.contributor.authorChristiansen, S.
dc.contributor.authorErfurth, E.
dc.contributor.authorGoesele, U.
dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.contributor.authorZhao, Q. T.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorMuster, F.
dc.contributor.authorPetzold, M.
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T10:07:22Z
dc.date.available2021-10-17T10:07:22Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14364
dc.source.beginpage311
dc.source.conferenceSemiconductor Wafer Bonding 10: Science, Technology, and Applications
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage320
dc.title

Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation

dc.typeProceedings paper
dspace.entity.typePublication
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