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On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
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On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
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Date
2013
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wu, Yung-Hsien
;
Wouters, Dirk
;
Hendrickx, Paul
;
Zhang, Leqi
;
Chen, Yangyin
;
Goux, Ludovic
;
Fantini, Andrea
;
Groeseneken, Guido
;
Jurczak, Gosia
Journal
IEEE Electron Device Letters
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1942
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Acq. date: 2025-12-09
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Views
1942
since deposited on 2021-10-21
2
last month
1
last week
Acq. date: 2025-12-09
Citations