Publication:

On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure

Date

2013
Journal article
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dc.contributor.authorWu, Yung-Hsien
dc.contributor.authorWouters, Dirk
dc.contributor.authorHendrickx, Paul
dc.contributor.authorZhang, Leqi
dc.contributor.authorChen, Yangyin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-21T14:43:32Z
dc.date.available2021-10-21T14:43:32Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23406
dc.source.beginpage414
dc.source.endpage416
dc.source.issue3
dc.source.journalIEEE Electron Device Letters
dc.source.volume34
dc.title

On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure

dc.typeJournal article
dspace.entity.typePublication
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