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In-depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature

Date

2014
Journal article
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dc.contributor.authorAchour, H.
dc.contributor.authorCretu, Bogdan
dc.contributor.authorRoutoure, Jean-Marc
dc.contributor.authorCarin, Regis
dc.contributor.authorTalmat, Rachida
dc.contributor.authorBenfdila, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T00:43:03Z
dc.date.available2021-10-22T00:43:03Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23466
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110114000495
dc.source.beginpage12
dc.source.endpage19
dc.source.journalSolid-State Electronics
dc.source.volume98
dc.title

In-depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature

dc.typeJournal article
dspace.entity.typePublication
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