SOI n- and pMuGFET devices with different TiN metal gate tThickness under influence of sidewall crystal orientation

dc.contributor.author	Rodrigues, M.
dc.contributor.author	Galeti, M.
dc.contributor.author	Martino, J.A.
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-19T18:10:55Z
dc.date.available	2021-10-19T18:10:55Z
dc.date.issued	2011
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/19693
dc.source.beginpage	215
dc.source.conference	26th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate	30/08/2011
dc.source.conferencelocation	Joao Pessoa Brazil
dc.source.endpage	222
dc.title	SOI n- and pMuGFET devices with different TiN metal gate tThickness under influence of sidewall crystal orientation
dc.type	Proceedings paper
dspace.entity.type	Publication
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