Publication:
Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation
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1908 since deposited on 2021-10-22
2last month
Acq. date: 2026-01-07
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Views
1908 since deposited on 2021-10-22
2last month
Acq. date: 2026-01-07
Citations