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Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation
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1906 since deposited on 2021-10-22
Acq. date: 2025-12-15
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Views
1906 since deposited on 2021-10-22
Acq. date: 2025-12-15
Citations