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Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

Date

2015
Proceedings Paper
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dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSioncke, Sonja
dc.contributor.authorCott, Daire
dc.contributor.authorMitard, Jerome
dc.contributor.authorConard, Thierry
dc.contributor.authorVanherle, Wendy
dc.contributor.authorLoo, Roger
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMertens, Hans
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHeyns, Marc
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T18:30:33Z
dc.date.available2021-10-22T18:30:33Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24939
dc.source.beginpage588
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage591
dc.title

Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

dc.typeProceedings paper
dspace.entity.typePublication
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