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The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices

Date

2005
Proceedings Paper
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dc.contributor.authorMantl, S.
dc.contributor.authorBuca, Dan
dc.contributor.authorHollander, Bernd
dc.contributor.authorTrinkaus, Helmut
dc.contributor.authorHueging, Norbert
dc.contributor.authorLuysberg, Martina
dc.contributor.authorLenk, Steffi
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorShaefer, Herbert
dc.contributor.authorReiche, Manfred
dc.contributor.authorRadu, Ionut
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T03:14:49Z
dc.date.available2021-10-16T03:14:49Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10845
dc.source.conferenceMRS Fall Meeting Symposium OO: Growth, Modification, and Analysis by Ion Beams at the Nanoscale
dc.source.conferencedate28/11/2005
dc.source.conferencelocationBoston, MA USA
dc.title

The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices

dc.typeProceedings paper
dspace.entity.typePublication
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