Publication:

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Date

2020
Journal article
https://doi.org/10.1021/acs.langmuir.0c00741
Simple item page Full metadata Statistics
 
dc.contributor.authorZheng, Li
dc.contributor.authorHe, Wei
dc.contributor.authorSpampinato, Valentina
dc.contributor.authorFranquet, Alexis
dc.contributor.authorSergeant, Stefanie
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorArmini, Silvia
dc.contributor.imecauthorSpampinato, Valentina
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorSergeant, Stefanie
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorArmini, Silvia
dc.contributor.orcidextSergeant, Stefanie::0000-0001-9923-0903
dc.contributor.orcidimecSpampinato, Valentina::0000-0003-3225-6740
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecSergeant, Stefanie::0000-0001-9923-0903
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.date.accessioned2021-11-25T13:23:54Z
dc.date.available2021-11-02T16:06:30Z
dc.date.available2021-11-25T13:23:54Z
dc.date.issued2020
dc.identifier.doi10.1021/acs.langmuir.0c00741
dc.identifier.issn0743-7463
dc.identifier.pmidMEDLINE:33104359
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38280
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage13144
dc.source.endpage13154
dc.source.issue44
dc.source.journalLANGMUIR
dc.source.numberofpages11
dc.source.volume36
dc.subject.keywordsSELF-ASSEMBLED MONOLAYERS
dc.subject.keywordsSURFACE-CHEMISTRY
dc.subject.keywordsTHIN-FILMS
dc.subject.keywordsGROWTH
dc.subject.keywordsNANOSCALE
dc.subject.keywordsOXIDE
dc.subject.keywordsALD
dc.title

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles