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The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures
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The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures
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Date
2002
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nicolett, A.S.
;
Martino, J.A.
;
Simoen, Eddy
;
Claeys, Cor
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1938
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Acq. date: 2025-12-15
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Views
1938
since deposited on 2021-10-14
3
last month
2
last week
Acq. date: 2025-12-15
Citations