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Enhanced initial growth of atomic layer deposited metal oxides on hydrogen-terminated silicon

Date

2003
Journal article
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dc.contributor.authorFrank, Martin M.
dc.contributor.authorChabal, Yves J.
dc.contributor.authorGreen, Martin
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBrijs, Bert
dc.contributor.authorWilk, Glen D.
dc.contributor.authorHo, Mun-Yee
dc.contributor.authorda Rosa, Elisa B.O.
dc.contributor.authorBaumvol, Israel J.R.
dc.contributor.authorStedile, Fernanda C.
dc.contributor.imecauthorDelabie, Annelies
dc.date.accessioned2021-10-15T04:42:24Z
dc.date.available2021-10-15T04:42:24Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7580
dc.source.beginpage740
dc.source.endpage742
dc.source.issue4
dc.source.journalApplied Physics Letters
dc.source.volume83
dc.title

Enhanced initial growth of atomic layer deposited metal oxides on hydrogen-terminated silicon

dc.typeJournal article
dspace.entity.typePublication
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