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Wet-chemical etching of III-V semiconductors: towards atomic-layer-scale processing

Date

2019
Meeting abstract
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dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorArnauts, Sophia
dc.contributor.authorKelly, John
dc.contributor.authorHolsteyns, Frank
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.date.accessioned2021-10-27T20:40:12Z
dc.date.available2021-10-27T20:40:12Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34210
dc.identifier.urlhttp://ma.ecsdl.org/content/MA2019-01/24/1227.abstract
dc.source.beginpage1227
dc.source.conference235th ECS Meeting
dc.source.conferencedate17/04/2017
dc.source.conferencelocationDallas, TX USA
dc.title

Wet-chemical etching of III-V semiconductors: towards atomic-layer-scale processing

dc.typeMeeting abstract
dspace.entity.typePublication
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