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Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs
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Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs
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Date
2024
Journal article
https://doi.org/10.1109/TED.2024.3473892
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yu, Hao
;
Yadav, Sachin
;
O'Sullivan, Barry
;
Lin, Tzu-Heng
;
Rathi, Aarti
;
Alian, Alireza
;
Wu, Tian-LI
;
Elkashlan, Rana
;
Banerjee, Sourish
;
Peralagu, Uthayasankaran
;
Parvais, Bertrand
;
Collaert, Nadine
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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225
since deposited on 2024-10-30
Acq. date: 2025-12-10
Citations
Metrics
Views
225
since deposited on 2024-10-30
Acq. date: 2025-12-10
Citations