Publication:
Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs
| dc.contributor.author | Yu, Hao | |
| dc.contributor.author | Yadav, Sachin | |
| dc.contributor.author | O'Sullivan, Barry | |
| dc.contributor.author | Lin, Tzu-Heng | |
| dc.contributor.author | Rathi, Aarti | |
| dc.contributor.author | Alian, Alireza | |
| dc.contributor.author | Wu, Tian-LI | |
| dc.contributor.author | Elkashlan, Rana | |
| dc.contributor.author | Banerjee, Sourish | |
| dc.contributor.author | Peralagu, Uthayasankaran | |
| dc.contributor.author | Parvais, Bertrand | |
| dc.contributor.author | Collaert, Nadine | |
| dc.contributor.imecauthor | Yu, Hao | |
| dc.contributor.imecauthor | Yadav, Sachin | |
| dc.contributor.imecauthor | O'Sullivan, Barry | |
| dc.contributor.imecauthor | Lin, Tzu-Heng | |
| dc.contributor.imecauthor | Rathi, Aarti | |
| dc.contributor.imecauthor | Alian, Alireza | |
| dc.contributor.imecauthor | Elkashlan, Rana | |
| dc.contributor.imecauthor | Banerjee, Sourish | |
| dc.contributor.imecauthor | Peralagu, Uthayasankaran | |
| dc.contributor.imecauthor | Parvais, Bertrand | |
| dc.contributor.imecauthor | Collaert, Nadine | |
| dc.contributor.orcidimec | Yu, Hao::0000-0002-1976-0259 | |
| dc.contributor.orcidimec | Yadav, Sachin::0000-0003-4530-2603 | |
| dc.contributor.orcidimec | O'Sullivan, Barry::0000-0002-9036-8241 | |
| dc.contributor.orcidimec | Rathi, Aarti::0000-0002-3858-1723 | |
| dc.contributor.orcidimec | Alian, AliReza::0000-0003-3463-416X | |
| dc.contributor.orcidimec | ElKashlan, Rana::0000-0003-0576-4344 | |
| dc.contributor.orcidimec | Banerjee, Sourish::0000-0002-4124-7881 | |
| dc.contributor.orcidimec | Peralagu, Uthayasankaran::0000-0001-9166-4408 | |
| dc.contributor.orcidimec | Parvais, Bertrand::0000-0003-0769-7069 | |
| dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
| dc.date.accessioned | 2025-04-29T07:01:54Z | |
| dc.date.available | 2024-10-30T17:13:36Z | |
| dc.date.available | 2025-04-29T07:01:54Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work was supported by imec's Advanced RF Program. | |
| dc.identifier.doi | 10.1109/TED.2024.3473892 | |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44698 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 7308 | |
| dc.source.endpage | 7313 | |
| dc.source.issue | 12 | |
| dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
| dc.source.numberofpages | 6 | |
| dc.source.volume | 71 | |
| dc.title | Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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