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Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors
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1974 since deposited on 2021-10-15
Acq. date: 2025-10-23
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Views
1974 since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations