Publication:
Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors
Date
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Mercha, Abdelkarim | |
| dc.contributor.author | Claeys, Cor | |
| dc.contributor.author | Young, E. | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.imecauthor | Mercha, Abdelkarim | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.contributor.orcidimec | Mercha, Abdelkarim::0000-0002-2174-6958 | |
| dc.date.accessioned | 2021-10-15T16:16:23Z | |
| dc.date.available | 2021-10-15T16:16:23Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9603 | |
| dc.source.beginpage | 1057 | |
| dc.source.endpage | 1059 | |
| dc.source.issue | 6 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 85 | |
| dc.title | Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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