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How far can we analyze oxide traps spatially with charge injection techniques?

Date

2008-12
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dc.contributor.authorCho, Moon Ju
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorZahid, Mohammed
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKaczer, Ben
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T06:31:58Z
dc.date.available2021-10-17T06:31:58Z
dc.date.issued2008-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13520
dc.source.conference39th IEEE Semiconductor Interface Specialists Conference
dc.source.conferencedate11/12/2008
dc.source.conferencelocationSan Diego, CA USA
dc.title

How far can we analyze oxide traps spatially with charge injection techniques?

dc.typeMeeting abstract
dspace.entity.typePublication
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