Publication:

Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

Date

2023
Journal article
https://doi.org/10.1149/2162-8777/acbe18
Simple item page Full metadata Statistics
 
dc.contributor.authorNagano, Fuya
dc.contributor.authorInoue, F.
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorPeng, Lan
dc.contributor.authorChancerel, Francois
dc.contributor.authorNaser, Hasan
dc.contributor.authorBeyer, Gerald
dc.contributor.authorUedono, A.
dc.contributor.authorBeyne, Eric
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorIacovo, Serena
dc.contributor.imecauthorNagano, Fuya
dc.contributor.imecauthorPhommahaxay, Alain
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorChancerel, Francois
dc.contributor.imecauthorNaser, Hasan
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorIacovo, Serena
dc.contributor.orcidimecNagano, Fuya::0000-0001-5315-8694
dc.contributor.orcidimecPhommahaxay, Alain::0000-0001-8672-2386
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecChancerel, Francois::0000-0003-4512-1634
dc.contributor.orcidimecBeyer, Gerald::0009-0001-0376-866X
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecIacovo, Serena::0000-0002-0826-9165
dc.date.accessioned2024-04-25T10:02:42Z
dc.date.available2023-03-25T03:50:46Z
dc.date.available2024-04-25T10:02:42Z
dc.date.embargo2023-03-02
dc.date.issued2023
dc.identifier.doi10.1149/2162-8777/acbe18
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41368
dc.publisherELECTROCHEMICAL SOC INC
dc.source.beginpageArt. 033002
dc.source.endpageN/A
dc.source.issue3
dc.source.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
dc.source.numberofpages8
dc.source.volume12
dc.subject.keywordsSICN
dc.title

Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
Nagano_2023_ECS_J._Solid_State_Sci._Technol._12_033002.pdf
Size:
1.39 MB
Format:
Adobe Portable Document Format
Description:
Published version
Download
Publication available in collections:
Articles