Publication:

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Date

2024
Journal article
https://doi.org/10.1063/5.0222572
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dc.contributor.authorChen, Zequan
dc.contributor.authorUren, Michael J.
dc.contributor.authorHuang, Peng
dc.contributor.authorSanyal, Indraneel
dc.contributor.authorSmith, Matthew D.
dc.contributor.authorVohra, Anurag
dc.contributor.authorKumar, Sujit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorKuball, Martin
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorKumar, Sujit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecKumar, Sujit::0000-0002-2564-2216
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2025-06-19T10:25:39Z
dc.date.available2024-09-11T18:07:10Z
dc.date.available2025-06-19T10:25:39Z
dc.date.embargo2024-08-31
dc.date.issued2024
dc.description.wosFundingTextWe acknowledge financial support from the Engineering and Physical Science Research Council (EPSRC) under EP/X035360/1.
dc.identifier.doi10.1063/5.0222572
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44462
dc.publisherAIP Publishing
dc.source.beginpageArt. 093505
dc.source.endpageN/A
dc.source.issue9
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages5
dc.source.volume125
dc.subject.keywordsCARBON
dc.title

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

dc.typeJournal article
dspace.entity.typePublication
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