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Comparison of an L-array and a single transistor method to extract Leff and Rs in deep submicron MOSFETs

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dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-30T07:56:55Z
dc.date.available2021-09-30T07:56:55Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1736
dc.source.beginpage660
dc.source.conferenceESSDERC '97: Proceedings of the 27th European Solid-State Device Research Conference
dc.source.conferencedate22/09/1997
dc.source.conferencelocationStuttgart Germany
dc.source.endpage663
dc.title

Comparison of an L-array and a single transistor method to extract Leff and Rs in deep submicron MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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