Publication:

Application of selective epitaxial growth in the sub 20 nm FinFET device fabrication

Date

2014
Proceedings Paper
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorEneman, Geert
dc.contributor.authorFavia, Paola
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T01:58:42Z
dc.date.available2021-10-22T01:58:42Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23937
dc.identifier.urlhttp://ecst.ecsdl.org/content/60/1/497.abstract
dc.source.beginpage497
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate16/03/2014
dc.source.conferencelocationShanghai China
dc.source.endpage502
dc.title

Application of selective epitaxial growth in the sub 20 nm FinFET device fabrication

dc.typeProceedings paper
dspace.entity.typePublication
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