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Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface
Publication:
Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface
Date
2018
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Matsu, Takayuki
;
Li, Yi
;
Hsu, Mark
;
Merckling, Clement
;
Oulton, Rupert
;
Cohen, Lesley
;
Maier, Stefan
Journal
Advanced Functional Materials
Abstract
Description
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1973
since deposited on 2021-10-25
406
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1973
since deposited on 2021-10-25
406
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations