Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface
Publication:
Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface
Copy permalink
Date
2018
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Matsu, Takayuki
;
Li, Yi
;
Hsu, Mark
;
Merckling, Clement
;
Oulton, Rupert
;
Cohen, Lesley
;
Maier, Stefan
Journal
Advanced Functional Materials
Abstract
Description
Metrics
Views
1975
since deposited on 2021-10-25
Acq. date: 2025-12-11
Citations
Metrics
Views
1975
since deposited on 2021-10-25
Acq. date: 2025-12-11
Citations