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Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface

Date

2018
Journal article
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dc.contributor.authorMatsu, Takayuki
dc.contributor.authorLi, Yi
dc.contributor.authorHsu, Mark
dc.contributor.authorMerckling, Clement
dc.contributor.authorOulton, Rupert
dc.contributor.authorCohen, Lesley
dc.contributor.authorMaier, Stefan
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-25T23:12:57Z
dc.date.available2021-10-25T23:12:57Z
dc.date.issued2018
dc.identifier.issn1616-301X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31314
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201705829
dc.source.beginpage1705829
dc.source.issue17
dc.source.journalAdvanced Functional Materials
dc.source.volume28
dc.title

Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface

dc.typeJournal article
dspace.entity.typePublication
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