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Inline evaluation of MOS capacitor properties using SEM transient signals

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dc.contributor.authorShirasaki, Yasuhiro
dc.contributor.authorYachi, Kazufumi
dc.contributor.authorHu, Yajian
dc.contributor.authorShoji, Minami
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorLorusso, Gian
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecArimura, Hiroaki::0000-0002-3138-708X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLorusso, Gian::0000-0003-3498-5082
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2025-07-28T03:57:27Z
dc.date.available2025-07-28T03:57:27Z
dc.date.issued2025
dc.identifier.doi10.1117/12.3049839
dc.identifier.eisbn978-1-5106-8639-7
dc.identifier.isbn978-1-5106-8638-0
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45952
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage134263G-1
dc.source.conference2025 Conference on Metrology Inspection and Process Control-Annual
dc.source.conferencedate2025-02-24
dc.source.conferencelocationSan Jose
dc.source.endpage134263G-7
dc.source.journalProceedings of SPIE
dc.source.numberofpages7
dc.title

Inline evaluation of MOS capacitor properties using SEM transient signals

dc.typeProceedings paper
dspace.entity.typePublication
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