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Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence

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dc.contributor.authorTallarico, Andrea
dc.contributor.authorMagnone, Paolo
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorHu, Jie
dc.contributor.authorMarcon, Denis
dc.contributor.authorSangiorgi, Enrico
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorFiegna, Claudio
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T15:26:15Z
dc.date.available2021-10-23T15:26:15Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27377
dc.source.beginpage4A.5
dc.source.conferenceIEEE International Reliability Physics Symposium
dc.source.conferencedate17/04/2016
dc.source.conferencelocationPasadena, CA USA
dc.title

Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence

dc.typeProceedings paper
dspace.entity.typePublication
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