Inelastic X-ray Scattering Measurement on Single-Crystalline GeSn Thin Film

dc.contributor.author	Chino, M.
dc.contributor.author	Yokogawa, R.
dc.contributor.author	Ogura, A.
dc.contributor.author	Uchiyama, H.
dc.contributor.author	Tatsuoka, H.
dc.contributor.author	Shimura, Yosuke
dc.contributor.imecauthor	Shimura, Yosuke
dc.contributor.orcidimec	Shimura, Yosuke::0000-0002-1944-9970
dc.date.accessioned	2023-11-03T09:10:09Z
dc.date.available	2023-05-22T20:15:46Z
dc.date.available	2023-11-03T09:10:09Z
dc.date.embargo	9999-12-31
dc.date.issued	2023
dc.description.wosFundingText	AcknowledgmentsThis study was supported by JSPS KAKENHI (Grant No. JP21K04137) from the Japan Society for the Promotion of Science. The IXS measurements were performed at the SPring-8 facility with the approval of the JASRI (Proposal No. 2021B1203). Ge1-xSnx single-crystalline thin films used for the IXS measurements in this study were fabricated by IMEC.
dc.identifier.doi	10.1007/s11664-023-10421-x
dc.identifier.issn	0361-5235
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/41609
dc.publisher	SPRINGER
dc.source.beginpage	5218
dc.source.endpage	5133
dc.source.issue	8
dc.source.journal	JOURNAL OF ELECTRONIC MATERIALS
dc.source.numberofpages	6
dc.source.volume	52
dc.subject.keywords	GROWTH
dc.title	Inelastic X-ray Scattering Measurement on Single-Crystalline GeSn Thin Film
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: s11664-023-10421-x.pdf Size: 804.15 KB Format: Adobe Portable Document Format Description: Published version Download
Publication available in collections:	Articles