Publication:
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Loading...
Journal
Abstract
Description
Statistics
Views
146 since deposited on 2024-04-01
1last month
Acq. date: 2026-04-06
Citations
Statistics
Views
146 since deposited on 2024-04-01
1last month
Acq. date: 2026-04-06
Citations