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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Publication:
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Date
2024
Journal article
https://doi.org/10.1063/5.0191973
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Goncalez Filho, Walter
;
Borga, Matteo
;
Geens, Karen
;
Khan, Md Arif
;
Cingu, Deepthi
;
Chatterjee, Urmimala
;
Vohra, Anurag
;
Decoutere, Stefaan
;
Bakeroot, Benoit
Journal
APPLIED PHYSICS LETTERS
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135
since deposited on 2024-04-01
Acq. date: 2025-10-24
Citations
Metrics
Views
135
since deposited on 2024-04-01
Acq. date: 2025-10-24
Citations