Publication:

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Date

2024
Journal article
https://doi.org/10.1063/5.0191973
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dc.contributor.authorGoncalez Filho, Walter
dc.contributor.authorBorga, Matteo
dc.contributor.authorGeens, Karen
dc.contributor.authorKhan, Md Arif
dc.contributor.authorCingu, Deepthi
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorVohra, Anurag
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorKhan, Md Arif
dc.contributor.imecauthorCingu, Deepthi
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorGoncalez Filho, Walter
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecKhan, Md Arif::0000-0003-4503-8136
dc.contributor.orcidimecCingu, Deepthi::0000-0002-3042-7289
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2025-06-19T10:20:02Z
dc.date.available2024-04-01T18:09:11Z
dc.date.available2025-06-19T10:20:02Z
dc.date.issued2024
dc.identifier.doi10.1063/5.0191973
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43754
dc.publisherAIP Publishing
dc.source.beginpageArt. 113502
dc.source.endpageN/A
dc.source.issue11
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages6
dc.source.volume124
dc.title

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

dc.typeJournal article
dspace.entity.typePublication
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