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Conference contributions
Selective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFET
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Selective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFET
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Date
2012
Meeting abstract
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25552.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vincent, Benjamin
;
Witters, Liesbeth
;
Richard, Olivier
;
Hikavyy, Andriy
;
Bender, Hugo
;
Loo, Roger
;
Caymax, Matty
;
Thean, Aaron
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1764
since deposited on 2021-10-20
Acq. date: 2025-12-15
Citations
Metrics
Views
1764
since deposited on 2021-10-20
Acq. date: 2025-12-15
Citations