Publication:

Selective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFET

Date

2012
Meeting abstract
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dc.contributor.authorVincent, Benjamin
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorRichard, Olivier
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T18:36:37Z
dc.date.available2021-10-20T18:36:37Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21806
dc.source.beginpage3105
dc.source.conferenceECS Fall Meeting Symposium: SiGE, Ge, and Related Compounds
dc.source.conferencedate8/12/2012
dc.source.conferencelocationHonolulu, HI USA
dc.title

Selective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFET

dc.typeMeeting abstract
dspace.entity.typePublication
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