Publication:

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Date

2022-01-25
Journal article
https://doi.org/10.1109/TED.2022.3141038
Simple item page Full metadata Statistics
Loading...
Thumbnail Image

Files

Published version 4.38 MB

Author(s)

Wu, Wei-Min  
;
Ker, Ming-Dou
;
Chen, Shih-Hung  
;
Sibaja-Hernandez, Arturo  
;
Yadav, Sachin  
;
Peralagu, Uthayasankaran  
;
Yu, Hao  
;
Alian, AliReza  
;
Putcha, Vamsi  
;
Parvais, Bertrand  
;
Collaert, Nadine  
;
Groeseneken, Guido  

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Abstract

Description

Statistics

Downloads

1 since deposited on 2022-08-03
Acq. date: 2026-01-25

Views

1689 since deposited on 2022-08-03
Acq. date: 2026-01-25

Citations

Statistics

Downloads

1 since deposited on 2022-08-03
Acq. date: 2026-01-25

Views

1689 since deposited on 2022-08-03
Acq. date: 2026-01-25

Citations