Publication:

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Date

2022-01-25
Journal article
https://doi.org/10.1109/TED.2022.3141038
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dc.contributor.authorWu, Wei-Min
dc.contributor.authorKer, Ming-Dou
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorYadav, Sachin
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorYu, Hao
dc.contributor.authorAlian, AliReza
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorWu, Wei-Min
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecWu, Wei-Min::0000-0002-8390-6785
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecChen, Shih-Hung::0000-0002-6481-2951
dc.date.accessioned2022-08-31T09:31:50Z
dc.date.available2022-08-03T13:47:22Z
dc.date.available2022-08-31T09:31:50Z
dc.date.embargo9999-12-31
dc.date.issued2022-01-25
dc.description.wosFundingTextThis work was supported in part by the Ministry of Science and Technology (MOST), Taiwan, under Contract MOST 110-2622-8-009-017-TP1.
dc.identifier.doi10.1109/TED.2022.3141038
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40201
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2180
dc.source.endpage2187
dc.source.issue4
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages8
dc.source.volume69
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsElectrostatic discharge
dc.subject.keywordshigh electron mobility transistor (HEMT)
dc.subject.keywordshuman body model (HBM)
dc.subject.keywordsradio frequency (RF)
dc.subject.keywordsgallium nitride (GaN)
dc.title

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

dc.typeJournal article
dspace.entity.typePublication
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