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Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering
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Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering
Date
2014-01
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Merckling, Clement
;
Waldron, Niamh
;
Jiang, Sijia
;
Guo, Weiming
;
Collaert, Nadine
;
Caymax, Matty
;
Vancoille, Eric
;
Barla, Kathy
;
Thean, Aaron
;
Heyns, Marc
;
Vandervorst, Wilfried
Journal
Journal of Applied Physics
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1969
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1969
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations